PMDPB58UPE Datasheet | NXP Semiconductors

description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. N2 1.2 Features and benefits - Low threshold voltage - Very fast switching - Trench MOSFET technology - 2 k V Electro Static Discharge (ESD) protection 1.3 Applications - Relay driver - High-speed line driver - High-side load switch - Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -2 A; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ 58 Max -20 8 -4.5 67 Unit V V A mΩ Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 drain TR1 drain TR2 1 2 3 S1 S2 017aaa260 Simplified outline 6 5 4 Graphic symbol D1 D2 G1 G2 Transparent top view DFN2020-6...