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PMDPB58UPE - 20V dual P-channel Trench MOSFET

General Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • 2 kV ElectroStatic Discharge (ESD) protection 1.3.

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Brand Logo Part Number Description Manufacturer
nexperia Logo PMDPB58UPE dual P-channel MOSFET nexperia

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDPB58UPE 020 -6 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DF N2 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications  Relay driver  High-speed line driver  High-side load switch  Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.