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PMDPB58UPE Datasheet

Manufacturer: NXP Semiconductors
PMDPB58UPE datasheet preview

Datasheet Details

Part number PMDPB58UPE
Datasheet PMDPB58UPE-NXPSemiconductors.pdf
File Size 330.96 KB
Manufacturer NXP Semiconductors
Description 20V dual P-channel Trench MOSFET
PMDPB58UPE page 2 PMDPB58UPE page 3

PMDPB58UPE Overview

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PMDPB58UPE Key Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • 2 kV ElectroStatic Discharge (ESD) protection

PMDPB58UPE from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
nexperia Logo PMDPB58UPE dual P-channel MOSFET nexperia
NXP Semiconductors logo - Manufacturer

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