PMDPB56XNEA
PMDPB56XNEA is dual N-channel MOSFET manufactured by Nexperia.
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Low threshold voltage
- Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
- Tin-plated 100 % solderable side pads for optical solder inspection
- Electro Static Discharge (ESD) protection > 2 k V HBM
- AEC-Q101 qualified
3. Applications
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon drain-source on-state VGS = 4.5 V; ID = 3.1 A; Tj = 25 °C resistance
Min Typ Max Unit
--
-12
- [1]
- -
30 V 12 V 3.1 A
- 55 72 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
30 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2
Simplified...
