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PMDPB56XNEA - dual N-channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm.
  • Tin-plated 100 % solderable side pads for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • AEC-Q101 qualified 3.

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Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo PMDPB56XN MOSFET NXP Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.