PMDPB55XP
PMDPB55XP is Dual P-channel MOSFET manufactured by Nexperia.
description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
1.3 Applications
- Charging switch for portable devices
- DC/DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and puting power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12
- 12 V
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1]
- - -4.5 A
Static characteristics (per transistor)
RDSon drain-source on-state VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C resistance
- 55 70 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
20 V, dual P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8
Pinning information Symbol Description
S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 D1 drain TR1 D2 drain TR2
3. Ordering information
Simplified...
