PMDPB58UPE
PMDPB58UPE is dual P-channel MOSFET manufactured by Nexperia.
description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 2 k V Electro Static Discharge (ESD) protection
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
Static characteristics (per transistor)
RDSon drain-source on-state VGS = -4.5 V; ID = -2 A; Tj = 25 °C resistance
Min Typ Max Unit
--
-8
- [1]
- -
-20 V 8V -4.5 A
- 58 67 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
20 V dual P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2
Simplified outline
Graphic...
