PMDPB58UPE Datasheet
PMDPB58UPE Datasheet (Nexperia)
Nexperia
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. .
and benefits
* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* 2 kV ElectroStatic Discharge (ESD) protection
3. Applications
* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
.
PMDPB58UPE Datasheet (NXP Semiconductors)
NXP Semiconductors
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. .
and benefits
* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* 2 kV ElectroStatic Discharge (ESD) protection
1.3 Applications
* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VG.