PMDPB70XP
description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
1.3 Applications
- Charging switch for portable devices
- DC/DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and puting power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
Per transistor
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per transistor)
Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
--
-12
- [1]
- -
-30 12 -3.8
RDSon drain-source on-state VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C resistance
- 70 87
[1] Device...
