PMDPB70XPE
PMDPB70XPE is dual P-channel MOSFET manufactured by Nexperia.
description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Trench MOSFET technology
- 2 k V Electro Static Discharge (ESD) protection
1.3 Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per transistor)
Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
RDSon drain-source on-state VGS = -4.5 V; ID = -2 A; Tj = 25 °C resistance
Min Typ Max Unit
--
-12
- [1]
- -
-20 V 12 V -4.2 A
- 66 79 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
20 V dual P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8
Pinning information Symbol Description
S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 D1 drain TR1 D2 drain TR2
3. Ordering information
Simplified outline
Graphic...
