PMDPB70XPE Datasheet and Specifications PDF

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. .

and benefits
* Very fast switching
* Trench MOSFET technology
* 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications
* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source .

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. .

and benefits
* Very fast switching
* Trench MOSFET technology
* 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications
* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditio.