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PMDPB70XPE - dual P-channel MOSFET

General Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Very fast switching.
  • Trench MOSFET technology.
  • 2 kV ElectroStatic Discharge (ESD) protection 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDPB70XPE 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications  Relay driver  High-speed line driver  High-side load switch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per transistor) Tj = 25 °C VGS = -4.