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PMDXB600UNE - Dual N-Channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM.
  • Drain-source on-state resistance RDSon = 470 mΩ 3.

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Full PDF Text Transcription for PMDXB600UNE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMDXB600UNE. For precise diagrams, and layout, please refer to the original PDF.

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a le...

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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.

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Brand Logo Part Number Description Manufacturer
NXP Logo PMDXB600UNE dual N-channel Trench MOSFET NXP

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