PMH260UNE
PMH260UNE is N-channel MOSFET manufactured by Nexperia.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection up to 1.8 k V HBM
- Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 0.7 A; Tj = 25 °C
Min Typ Max
- -
-8
- 8
[1]
- -
- 260 310
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Unit V V A mΩ
Nexperia
5. Pinning information
Table 2. Pinning information
Pin...
