Datasheet Summary
30 V, N-channel Trench MOSFET
6 February 2023
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Condition...