Datasheet4U Logo Datasheet4U.com

PMN70EPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Logic-level compatible.
  • Very fast switching.
  • Enhanced power dissipation capability of 1.4 W.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

📥 Download Datasheet

📁 Similar Datasheet

  • PMN70XPE - MOSFET (NXP Semiconductors)
  • PMN20EN - 6.7A N-channel Trench MOSFET (NXP Semiconductors)
  • PMN22XN - single N-channel Trench MOSFET (NXP Semiconductors)
  • PMN23UN - UTrenchMOS ultra low level FET (NXP Semiconductors)
  • PMN25EN - 6.2A N-channel Trench MOSFET (NXP Semiconductors)
  • PMN25UN - 6A N-channel Trench MOSFET (NXP Semiconductors)
  • PMN27UN - TrenchMOS ultra low level FET (NXP Semiconductors)
  • PMN27UP - MOSFET (NXP Semiconductors)
  • PMN27XPE - MOSFET (NXP Semiconductors)
  • PMN27XPEA - single P-channel Trench MOSFET (NXP)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMN70EPE 30 V, P-channel Trench MOSFET 23 May 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • Enhanced power dissipation capability of 1.4 W • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1.
Published: |