PMN70EPE Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
PMN70EPE Key Features
- Trench MOSFET technology
- Logic-level patible
- Very fast switching
- Enhanced power dissipation capability of 1.4 W
- ElectroStatic Discharge (ESD) protection > 2 kV HBM