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PMV120ENEA N-channel Trench MOSFET

PMV120ENEA Description

PMV120ENEA 60 V, N-channel Trench MOSFET 4 March 2016 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMV120ENEA Features

* Logic level compatible
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

PMV120ENEA Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-sou

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