PMV42ENE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMV42ENE Key Features
- Logic level patible
- Low on-state resistance
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 1 kV HBM
- Enhanced power dissipation capability of 1 W