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nexperia

PMV48XPA Datasheet Preview

PMV48XPA Datasheet

P-channel MOSFET

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PMV48XPA
20 V, P-channel Trench MOSFET
10 March 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Logic-level compatible
Trench MOSFET technology
Very fast switching
AEC-Q101 qualified
3. Applications
High-side loadswitch
High-speed line driver
Relay driver
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -3.5 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
resistance
- 48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.




nexperia

PMV48XPA Datasheet Preview

PMV48XPA Datasheet

P-channel MOSFET

No Preview Available !

Nexperia
PMV48XPA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S
017aaa094
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV48XPA
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
7. Marking
Table 4. Marking codes
Type number
PMV48XPA
Marking code
[1]
%DZ
[1] % = placeholder for manufacturing site code
PMV48XPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 March 2014
© Nexperia B.V. 2017. All rights reserved
2 / 15


Part Number PMV48XPA
Description P-channel MOSFET
Maker nexperia
Total Page 15 Pages
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