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PMV50UPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • 3 kV ESD protected.
  • Trench MOSFET technology.
  • Low threshold voltage 1.3.

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Full PDF Text Transcription

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PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 3 kV ESD protected • Trench MOSFET technology • Low threshold voltage 1.3 Applications • Relay driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -3.
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