PMV52ENEA Key Features
- Logic-level patible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
- AEC-Q101 qualified
- Part: PMV52ENEA
- Manufacturer: Nexperia
- Size: 264.79 KB
Related Nexperia Datasheets
| Part Number | Description |
|---|---|
| PMV50ENEA | N-channel MOSFET |
| PMV50EPEA | P-channel MOSFET |
| PMV50UPE | P-channel MOSFET |
| PMV50XP | P-channel Trench MOSFET |
| PMV55ENEA | N-channel MOSFET |
PMV52ENEA Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.