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PMV50UPE
20 V, single P-channel Trench MOSFET
20 July 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • 3 kV ESD protected • Trench MOSFET technology • Low threshold voltage
1.3 Applications • Relay driver • High-side loadswitch • Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.
PMV50UPE Datasheet
