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PMV56XN
µTrenchMOS™ extremely low level FET
Rev. 02 — 24 June 2004
M3D088
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s TrenchMOS™ technology s Low threshold voltage s Very fast switching s Subminiature surface mount package.
1.3 Applications
s Battery management s High-speed switch s Low power DC-to-DC converter.
1.4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 1.92 W s ID ≤ 3.76 A s RDSon ≤ 85 mΩ
2. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain (d)
g
1 Top view 2
MSB003
Simplified outline
3
Symbol
d
mbb076
s
SOT23
Philips Semiconductors
PMV56XN
µTrenchMOS™ extremely low level FET
3.
PMV56XN Datasheet
