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PMV56XN - extremely low level FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s TrenchMOS™ technology s Low threshold voltage s Very fast switching s Subminiature surface mount package. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV56XN µTrenchMOS™ extremely low level FET Rev. 02 — 24 June 2004 M3D088 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s TrenchMOS™ technology s Low threshold voltage s Very fast switching s Subminiature surface mount package. 1.3 Applications s Battery management s High-speed switch s Low power DC-to-DC converter. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 1.92 W s ID ≤ 3.76 A s RDSon ≤ 85 mΩ 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MSB003 Simplified outline 3 Symbol d mbb076 s SOT23 Philips Semiconductors PMV56XN µTrenchMOS™ extremely low level FET 3.