PMV65ENEA Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMV65ENEA Key Features
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- Electrostatic Discharge (ESD) protection > 2 kV HBM
- AEC-Q101 qualified