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PMV65XP - P-channel TrenchMOS extremely low level FET

Description

P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.

Features

  • s Low threshold voltage s Low on-state resistance. 1.3.

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Full PDF Text Transcription

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www.DataSheet4U.com PMV65XP P-channel TrenchMOS™ extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low threshold voltage s Low on-state resistance. 1.3 Applications s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment. 1.4 Quick reference data s VDS ≤ −20 V s RDSon ≤ 76 mΩ s ID ≤ −3.9 A s Qgd = 0.65 nC (typ). 2. Pinning information Table 1: Pin 1 2 3 Discrete pinning Description gate (g) source (s) drain (d) g Simplified outline 3 Symbol d 1 2 SOT23 s 003aaa671 SOT23 www.DataSheet4U.com www.DataSheet4U.
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