PMV65XPE Key Features
- Trench MOSFET technology
- Very fast switching
- Enhanced power dissipation capability: Ptot = 890 mW
- ElectroStatic Discharge (ESD) protection 2 kV HBM
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PMV65XPEA | P-channel Trench MOSFET |
NXP Semiconductors |
PMV65XP | P-channel TrenchMOS extremely low level FET |