Datasheet4U Logo Datasheet4U.com

PMV65XP - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Low on-state resistance.
  • Trench MOSFET technology 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMV65XP P-channel TrenchMOS extremely low level FET NXP
PMV65XPEA P-channel Trench MOSFET NXP
PMV60EN UTrenchMOS enhanced logic level FET NXP
PMV117EN uTrenchMOS enhanced logic level FET NXP
PMV117EN N-Channel MOSFET VBsemi

Other Datasheets by nexperia

Part Number Description
PMV65XPE P-channel MOSFET
PMV65XPEA P-channel MOSFET
PMV65ENEA N-channel MOSFET
PMV65UNE N-channel MOSFET
PMV65UNEA N-channel MOSFET

Full PDF Text Transcription

Click to expand full text
PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology 3. Applications • Low power DC-to-DC converters • Load switching • Battery management • Battery powered portable equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tsp = 25 °C VGS = -4.5 V; ID = -2.
Published: |