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PMV65UNE - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Enhanced power dissipation capability of 940 mW.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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Full PDF Text Transcription

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PMV65UNE 20 V, N-channel Trench MOSFET 22 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Enhanced power dissipation capability of 940 mW • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.
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