PMV65UNE Key Features
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 940 mW
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PMV65XP | P-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
PMV65XPEA | P-channel Trench MOSFET |