Datasheet Summary
20 V, N-channel Trench MOSFET
17 March 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 940 mW
- ElectroStatic Discharge (ESD) protection > 2KV HBM
- AEC-Q101 qualified
3. Applications
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain...
