Datasheet4U Logo Datasheet4U.com

PMV65XP - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Low on-state resistance.
  • Trench MOSFET technology 3.

📥 Download Datasheet

📁 Similar Datasheet

  • PMV65XP - P-channel TrenchMOS extremely low level FET (NXP)
  • PMV65XPEA - P-channel Trench MOSFET (NXP)
  • PMV60EN - UTrenchMOS enhanced logic level FET (NXP)
  • PMV117EN - uTrenchMOS enhanced logic level FET (NXP)
  • PMV117EN - N-Channel MOSFET (VBsemi)
  • PMV130ENEA - N-channel Trench MOSFET (NXP)
  • PMV160UP - 1.2A P-channel Trench MOSFET (NXP Semiconductors)
  • PMV16UN - N-channel Trench MOSFET (NXP Semiconductors)
  • PMV170UN - single N-channel Trench MOSFET (NXP Semiconductors)
  • PMV185XN - MOSFET (NXP)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology 3. Applications • Low power DC-to-DC converters • Load switching • Battery management • Battery powered portable equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tsp = 25 °C VGS = -4.5 V; ID = -2.
Published: |