PMXB350UPE Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMXB350UPE Key Features
- Trench MOSFET technology
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge (ESD) protection 1 kV HBM
- Drain-source on-state resistance RDSon = 350 mΩ
PMXB350UPE Applications
- High-side load switch and charging switch for portable devices
- Power management in battery driven portables