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PMXB350UPE - P-Channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection 1 kV HBM.
  • Drain-source on-state resistance RDSon = 350 mΩ 3.

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Full PDF Text Transcription for PMXB350UPE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMXB350UPE. For precise diagrams, and layout, please refer to the original PDF.

PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ...

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-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-source on-state resistance RDSon = 350 mΩ 3. Applications • High-side load switch and charging switch for portable devices • Power management in battery driven portables • LED driver • DC-to-DC converter 4.

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NXP Logo PMXB350UPE P-channel Trench MOSFET NXP

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