PMXB350UPE - P-channel Trench MOSFET

Product Overview

NXP

PMXB350UPE P-channel Trench MOSFET by NXP - Datasheet Preview — Datasheet preview – PMXB350UPE

Datasheet Details

Part number	PMXB350UPE
Manufacturer	NXP
File Size	258.83 KB
Description	P-channel Trench MOSFET
Datasheet	PMXB350UPE Datasheet
Additional preview pages of the PMXB350UPE datasheet.

Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 100 mΩ 3.

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Other Datasheets by NXP

PMXB360ENEA - N-channel Trench MOSFET
PMXB120EPE - P-channel Trench MOSFET
PMXB40UNE - N-channel Trench MOSFET
PMXB43UNE - N-channel Trench MOSFET
PMXB56EN - N-channel Trench MOSFET
PMXB65ENE - N-channel Trench MOSFET

Published: Nov 11, 2013 |