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PMXB350UPE - P-Channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection 1 kV HBM.
  • Drain-source on-state resistance RDSon = 350 mΩ 3.

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Brand Logo Part Number Description Manufacturer
NXP Logo PMXB350UPE P-channel Trench MOSFET NXP

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-source on-state resistance RDSon = 350 mΩ 3. Applications • High-side load switch and charging switch for portable devices • Power management in battery driven portables • LED driver • DC-to-DC converter 4. Quick reference data Table 1.