Nexperia PMXB350UPE
P-Channel MOSFET
| Part No. | PMXB350UPE |
|---|---|
| Datasheet | PMXB350UPE Download |
| Manufacturer |  Nexperia |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Trench MOSFET technology● Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
● Exposed drain pad for excellent thermal conduction
● ElectroStatic Discharge (ESD) protection 1 kV HBM
● Drain-source on-state resistance RDSon = 350 mΩ 3.
APPLICATIONS
● High-side load switch and charging switch for portable devices● Power management in battery driven portables
● LED driver
● DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - - -1.2 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C resistance - 350 447 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMXB350UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pin...
