Datasheet Details
| Part number | PMXB40UNE |
|---|---|
| Manufacturer | Nexperia |
| File Size | 728.30 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 PMXB40UNE Datasheet
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General Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Key Features
- Trench MOSFET technology.
- Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
- Exposed drain pad for excellent thermal conduction.
- ElectroStatic Discharge (ESD) protection 1 kV.
- Very low Drain-Source on-state resistance RDSon = 34 mΩ.
- Very low threshold voltage of 0.65 V for portable.
