PMZB350UPE Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMZB350UPE Key Features
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 1.8 kV ESD protected