Datasheet Summary
1 August 2012
20 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 1.8 kV ESD protected 1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb =...
