PMZB350UPE - single P-channel Trench MOSFET

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PMZB350UPE
Manufacturer	NXP Semiconductors
File Size	188.52 KB
Description	single P-channel Trench MOSFET
Datasheet	PMZB350UPE Datasheet
Additional preview pages of the PMZB350UPE datasheet.

Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Low threshold voltage.
Very fast switching.
Trench MOSFET technology.
1.8 kV ESD protected 1.3.

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Published: Aug 16, 2014 |