PMZB350UPE Datasheet
PMZB350UPE Datasheet (NXP Semiconductors)
NXP Semiconductors
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b.
and benefits
* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* 1.8 kV ESD protected 1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter d.
PMZB350UPE Datasheet (Nexperia)
Nexperia
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b.
and benefits
* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* 1.8 kV ESD protected
1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
.