Datasheet Summary
20 V, single P-channel Trench MOSFET
1 August 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 1.8 kV ESD protected
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS...
