PSMN013-60YL Datasheet N-channel MOSFET

Manufacturer: Nexperia

Datasheet Details

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.

This product is designed and qualified for use in a wide range of power supply & motor control equipment.

PSMN013-60YL N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1.

Advanced TrenchMOS provides low RDSon and low gate charge.
Logic level gate operation.
Avalanche rated, 100% tested.
LFPAK provides maximum power density in a Power SO8 package 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-stat.