The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PSMN013-60HS
N-channel 60 V, 10 mOhm, standard level MOSFET in
LFPAK56D using TrenchMOS technology
26 September 2022
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.
2. Features and benefits
• Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C
3. Applications
• Brushless DC motor control • DC-to-DC converters • High-performance synchronous rectification • High performance and high efficiency server power supply
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
VDS
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
-
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig.
PSMN013-60HS Datasheet
