Datasheet Details
| Part number | PSMN013-60YL |
|---|---|
| Manufacturer | Nexperia |
| File Size | 748.12 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN013-60YL Datasheet
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General Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.
This product is designed and qualified for use in a wide range of power supply & motor control equipment.
2.
Key Features
- Advanced TrenchMOS provides low RDSon and low gate charge.
- Logic level gate operation.
- Avalanche rated, 100% tested.
- LFPAK provides maximum power density in a Power SO8 package 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-stat.