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PSMN013-60YL - N-channel MOSFET

Datasheet Summary

Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.

This product is designed and qualified for use in a wide range of power supply & motor control equipment.

2.

Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • Logic level gate operation.
  • Avalanche rated, 100% tested.
  • LFPAK provides maximum power density in a Power SO8 package 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-stat.

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Datasheet Details

Part number PSMN013-60YL
Manufacturer nexperia
File Size 748.12 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN013-60YL Datasheet
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PSMN013-60YL N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charge • Logic level gate operation • Avalanche rated, 100% tested • LFPAK provides maximum power density in a Power SO8 package 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig.
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