PSMN015-110P Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
PSMN015-110P Key Features
- Low conduction losses due to low on-state resistance
- Simple gate drive required due to low gate charge