900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






nexperia

PSMN059-150Y Datasheet Preview

PSMN059-150Y Datasheet

N-channel MOSFET

No Preview Available !

PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
3 October 2013
Product data sheet
1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
Higher operating power due to low thermal resistance
Suitable for high frequency applications due to fast switching characteristics
3. Applications
Class D amplifier
DC-to-DC converters
Motion control
Switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 12 A; Tj = 25 °C;
resistance
Fig. 9; Fig. 10
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 12 A; VDS = 75 V;
Fig. 11; Fig. 12
Min Typ Max Unit
- - 150 V
- - 43 A
- - 113 W
- 46 59 mΩ
- 9.1 - nC




nexperia

PSMN059-150Y Datasheet Preview

PSMN059-150Y Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN059-150Y
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN059-150Y
Marking code
059150
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 Ω
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
PSMN059-150Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 October 2013
Min Max Unit
- 150 V
- 150 V
-20 20
V
- 43 A
- 27.7 A
- 129 A
- 113 W
-55 150 °C
© Nexperia B.V. 2017. All rights reserved
2 / 12


Part Number PSMN059-150Y
Description N-channel MOSFET
Maker nexperia
PDF Download

PSMN059-150Y Datasheet PDF






Similar Datasheet

1 PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors
2 PSMN059-150Y N-channel MOSFET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy