Datasheet Details
| Part number | PSMN1R0-40YLD |
|---|---|
| Manufacturer | Nexperia |
| File Size | 256.51 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN1R0-40YLD Datasheet
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General Description
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.
This product has been designed and qualified for high performance power switching applications.
2.
Key Features
- 280 A capability.
- Avalanche rated, 100% tested at IAS = 190 A.
- NextPower-S3 technology delivers 'superfast switching with soft recovery'.
- Low QRR, QG and QGD for high system efficiency and low EMI designs.
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
- Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
- High reliability LFPAK (Power SO8) package, copper-clip, sold.
