NXP Semiconductors PSMN1R0-40YLD
This product has been designed and qualified for high performance power switching applications.| Part No. | PSMN1R0-40YLD |
|---|---|
| Datasheet | PSMN1R0-40YLD Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● NextPower-S3 technology delivers 'superfast switching with soft recovery'● Low QRR, QG and QGD for high system efficiency and low EMI designs
● Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
● Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
● High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C
● Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
● Low parasitic inductance and resistance 3.
APPLICATIONS
● Synchronous rectification● DC-to-DC converters
● High performance & high efficiency server power supply
● Motor control
● Power ORing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig.
