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PSMN1R0-40YLD - N-channel MOSFET

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NXP

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PSMN1R0-40YLD N-channel MOSFET by NXP - Datasheet Preview — Datasheet preview – PSMN1R0-40YLD

Datasheet Details

Part number	PSMN1R0-40YLD
Manufacturer	NXP
File Size	287.32 KB
Description	N-channel MOSFET
Datasheet	PSMN1R0-40YLD Datasheet
Additional preview pages of the PSMN1R0-40YLD datasheet.

Product details

Description

Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

Features

NextPower-S3 technology delivers 'superfast switching with soft recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C.
Exposed leads can be wave soldere.

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Published: Feb 24, 2016 |