Datasheet4U Logo Datasheet4U.com

PSMN1R0-40YLD - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Key Features

  • NextPower-S3 technology delivers 'superfast switching with soft recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
  • High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C.
  • Exposed leads can be wave soldere.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSMN1R0-40YLD N-channel MOSFET nexperia
PSMN1R0-40YSH N-channel MOSFET nexperia
PSMN1R0-40SSH N-channel MOSFET nexperia
PSMN1R0-40ULD N-channel MOSFET nexperia
PSMN1R0-100ASE N-channel MOSFET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PSMN1R0-30YLD N-channel MOSFET
PSMN1R1-30PL MOSFET
PSMN1R1-40BS MOSFET
PSMN1R2-25YL N-channel 25 V 1.2 MOhm Logic Level MOSFET
PSMN1R2-25YLC N-channel 25V 1.3m ohm logic level MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LFPAK56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • NextPower-S3 technology delivers 'superfast switching with soft recovery' • Low QRR, QG and QGD for high system efficiency and low EMI designs • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage • Optimised for 4.