PSMN1R0-40YLD Overview
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN1R0-40YLD Key Features
- 280 A capability
- Avalanche rated, 100% tested at IAS = 190 A
- NextPower-S3 technology delivers 'superfast switching with soft recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
- Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
- High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
- Low parasitic inductance and resistance
