PSMN1R0-40YSH Description
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN1R0-40YSH Key Features
- 290 A continuous ID(max)
- Avalanche rated, 100% tested
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
- Strong linear-mode / SOA rating
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
- Low parasitic inductance and resistance