PSMN1R0-40YSH Datasheet PDF - nexperia N-channel MOSFET Specs

PSMN1R0-40YSH - N-channel MOSFET

Datasheet Summary

Description

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

Features

290 A continuous ID(max).
Avalanche rated, 100% tested.
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
Strong linear-mode / SOA rating.
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C.

Datasheet Details

Part number	PSMN1R0-40YSH
Manufacturer	nexperia
File Size	295.15 KB
Description	N-channel MOSFET
Datasheet	PSMN1R0-40YSH Datasheet
Additional preview pages of the PSMN1R0-40YSH datasheet.

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Full PDF Text Transcription

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PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2.

Published: Jul 28, 2019 |