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PSMN1R0-40YSH Datasheet N-channel MOSFET

Manufacturer: Nexperia

Overview: PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1.

General Description

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Key Features

  • 290 A continuous ID(max).
  • Avalanche rated, 100% tested.
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Strong linear-mode / SOA rating.
  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C.

PSMN1R0-40YLD from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
NXP Logo PSMN1R0-40YLD N-channel MOSFET NXP

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