PSMN1R3-100ASF datasheet, mosfet equivalent, nexperia

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Features and benefits

* Low Qrr for higher efficiency and lower spiking
* 355 Amps ID(max) continuous current rating
* Low QG × RDSon FOM for high efficiency switching applications.

Application

2. Features and benefits
* Low Qrr for higher efficiency and lower spiking
* 355 Amps ID(max) continuous curre.

Description

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits
* Low Qrr for higher efficiency and lower spiking
* 355 Amps ID(max) continu.

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