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PSMN1R7-30YL - N-channel MOSFET

General Description

Logic level N-channel MOSFET in LFPAK package qualified to 175 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Key Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • High efficiency gains in switching power convertors.
  • Improved mechanical and thermal characteristics.
  • LFPAK provides maximum power density in a Power SO8 package 1.3.

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Full PDF Text Transcription for PSMN1R7-30YL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN1R7-30YL. For precise diagrams, and layout, please refer to the original PDF.

PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 1 — 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MO...

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et 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charge  High efficiency gains in switching power convertors  Improved mechanical and thermal characteristics  LFPAK provides maximum power density in a Power SO8 package 1.3 Applications  DC-to-DC converters  Lithium-ion battery protection  Load switching  Motor control  Server power supplies 1.4 Quick reference

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo PSMN1R7-30YL N-channel FET NXP Semiconductors

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