Datasheet Summary
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N-channel TrenchMOS logic level FET
Rev. 01
- 11 September 2008 Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and munications applications.
1.2 Features and benefits
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
1.3 Applications
- Class-D amplifiers
- DC-to-DC converters
- Motor control
- Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C;...
