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PSMN1R9-40YSD - 40V MOSFET

General Description

Standard level gate drive N-channel enhancement mode MOSFET.

2.

Table 1.

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PSMN1R9-40YSD 40 V standard level MOSFET 17 June 2019 Preliminary data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET. 2. Quick ...

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Standard level gate drive N-channel enhancement mode MOSFET. 2. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 [1] VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 8 ID = 25 A; VDS = 20 V; VGS = 10 V; Fig. 10; Fig. 11 Min Typ Max Unit - - 40 V - - 120 A - - 194 W -55 - 175 °C - 1.6 1.9 mΩ - 8.

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