Full PDF Text Transcription for PSMN3R5-30YL (Reference)
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PSMN3R5-30YL. For precise diagrams, and layout, please refer to the original PDF.
PSMN3R5-30YL N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect...
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eneral description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for logic level gate drive sources 3. Applications • Class-D amplifiers • DC-to-DC converters • Motor control • Server power supplies 4. Quick reference data Table 1.
PSMN3R5-30YL Datasheet
