logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

PTVS7V0S1UTR-Q nexperia

PTVS7V0S1UTR-Q High-temperature 400W Transient Voltage Suppressor

PTVS7V0S1UTR-Q Avg. rating / M : star-15

datasheet Download

PTVS7V0S1UTR-Q Datasheet

Features and benefits


• Rated peak pulse power: PPPM = 400 W (350 W for 3V3)
• Reverse standoff voltage range: VRWM = 3.3 V to 64 V
• Reverse current: IRM = 0.001 μA
• Very low.

Application

2. Features and benefits
• Rated peak pulse power: PPPM = 400 W (350 W for 3V3)
• Reverse standoff voltage ran.

Image gallery

PTVS7V0S1UTR-Q PTVS7V0S1UTR-Q PTVS7V0S1UTR-Q

TAGS
PTVS7V0S1UTR-Q
High-temperature
400W
Transient
Voltage
Suppressor
PTVS7V0S1UTR
PTVS7V0S1UR
PTVS7V0S1UR-Q
nexperia
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy